Toshiba Semiconductor and Storage SSM3K16CT,L3F

Toshiba Semiconductor and Storage SSM3K16CT,L3F electronic component product image

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Manufacturer No
SSM3K16CT,L3F
Quantity
13,860
Availability
In Stock
Package
SC-101, SOT-883
Packaging
Tape & Reel (TR); Cut Tape (CT)
Description
MOSFET N-CH 20V 100MA CST3
Detailed Description
N-Channel 20 V 100mA (Ta) 100mW (Ta) Surface Mount CST3
Datasheet
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AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
Mfr
Toshiba Semiconductor and Storage
Grade
-
Series
π-MOSIV
FET Type
N-Channel
Packaging
Tape & Reel (TR); Cut Tape (CT)
Vgs (Max)
±10V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Mounting Type
Surface Mount
Qualification
-
Package / Case
SC-101, SOT-883
Vgs(th) (Max) @ Id
1.1V @ 100µA
Base Product Number
SSM3K16
Operating Temperature
150°C
Rds On (Max) @ Id, Vgs
3Ohm @ 10mA, 4V
Power Dissipation (Max)
100mW (Ta)
Supplier Device Package
CST3
Drain to Source Voltage (Vdss)
20 V
Input Capacitance (Ciss) (Max) @ Vds
9.3 pF @ 3 V
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4V
Current - Continuous Drain (Id) @ 25°C
100mA (Ta)
AttributeValue
MfrToshiba Semiconductor and Storage
Grade-
Seriesπ-MOSIV
FET TypeN-Channel
PackagingTape & Reel (TR); Cut Tape (CT)
Vgs (Max)±10V
TechnologyMOSFET (Metal Oxide)
FET Feature-
Mounting TypeSurface Mount
Qualification-
Package / CaseSC-101, SOT-883
Vgs(th) (Max) @ Id1.1V @ 100µA
Base Product NumberSSM3K16
Operating Temperature150°C
Rds On (Max) @ Id, Vgs3Ohm @ 10mA, 4V
Power Dissipation (Max)100mW (Ta)
Supplier Device PackageCST3
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds9.3 pF @ 3 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4V
Current - Continuous Drain (Id) @ 25°C100mA (Ta)

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