Toshiba Semiconductor and Storage RN2107ACT(TPL3)

Toshiba Semiconductor and Storage RN2107ACT(TPL3) electronic component product image

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Manufacturer No
RN2107ACT(TPL3)
Package
SC-101, SOT-883
Packaging
Tape & Reel (TR)
Description
TRANS PREBIAS PNP 50V 0.08A CST3
Detailed Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 80 mA 100 mW Surface Mount CST3
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Delivery
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AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
Series
-
Packaging
Tape & Reel (TR)
Power - Max
100 mW
Manufacturer
Toshiba Semiconductor and Storage
Mounting Type
Surface Mount
Package / Case
SC-101, SOT-883
Transistor Type
PNP - Pre-Biased
Resistors Included
R1 and R2
Base Product Number
RN2107
Resistor - Base (R1)
10 kOhms
Supplier Device Package
CST3
Resistor - Emitter Base (R2)
47 kOhms
Vce Saturation (Max) @ Ib, Ic
150mV @ 250µA, 5mA
Current - Collector (Ic) (Max)
80 mA
Current - Collector Cutoff (Max)
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max)
50 V
AttributeValue
Series-
PackagingTape & Reel (TR)
Power - Max100 mW
ManufacturerToshiba Semiconductor and Storage
Mounting TypeSurface Mount
Package / CaseSC-101, SOT-883
Transistor TypePNP - Pre-Biased
Resistors IncludedR1 and R2
Base Product NumberRN2107
Resistor - Base (R1)10 kOhms
Supplier Device PackageCST3
Resistor - Emitter Base (R2)47 kOhms
Vce Saturation (Max) @ Ib, Ic150mV @ 250µA, 5mA
Current - Collector (Ic) (Max)80 mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max)50 V

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Packaging Process

Product before packing
Step1: Product
Product in vacuum packaging
Step2: Vacuum Packaging
Product in anti-static bag
Step3: Anti-Static Bag
Individual packaging box
Step4: Package Boxes
Packaging box with shipping label
Step5: Bar-Code Shipping Tags
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Step6: Shipping