Toshiba Semiconductor and Storage MT3S111TU,LF

Toshiba Semiconductor and Storage MT3S111TU,LF electronic component product image

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Manufacturer No
MT3S111TU,LF
Quantity
189
Availability
In Stock
Package
3-SMD, Flat Leads
Packaging
Tape & Reel (TR); Cut Tape (CT)
Description
RF TRANS NPN 6V 10GHZ UFM
Detailed Description
RF Transistor NPN 6V 100mA 10GHz 800mW Surface Mount UFM
Datasheet
Payment
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Delivery
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AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
Gain
12.5dB
Series
-
Packaging
Tape & Reel (TR); Cut Tape (CT)
Power - Max
800mW
Manufacturer
Toshiba Semiconductor and Storage
Mounting Type
Surface Mount
Package / Case
3-SMD, Flat Leads
Transistor Type
NPN
Base Product Number
MT3S111
Operating Temperature
150°C (TJ)
Frequency - Transition
10GHz
Supplier Device Package
UFM
Noise Figure (dB Typ @ f)
0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Current - Collector (Ic) (Max)
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 30mA, 5V
Voltage - Collector Emitter Breakdown (Max)
6V
AttributeValue
Gain12.5dB
Series-
PackagingTape & Reel (TR); Cut Tape (CT)
Power - Max800mW
ManufacturerToshiba Semiconductor and Storage
Mounting TypeSurface Mount
Package / Case3-SMD, Flat Leads
Transistor TypeNPN
Base Product NumberMT3S111
Operating Temperature150°C (TJ)
Frequency - Transition10GHz
Supplier Device PackageUFM
Noise Figure (dB Typ @ f)0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Current - Collector (Ic) (Max)100mA
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 30mA, 5V
Voltage - Collector Emitter Breakdown (Max)6V

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Packaging Process

Product before packing
Step1: Product
Product in vacuum packaging
Step2: Vacuum Packaging
Product in anti-static bag
Step3: Anti-Static Bag
Individual packaging box
Step4: Package Boxes
Packaging box with shipping label
Step5: Bar-Code Shipping Tags
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