Toshiba Semiconductor and Storage HN1C03FU-B,LF

Toshiba Semiconductor and Storage HN1C03FU-B,LF electronic component product image

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Manufacturer No
HN1C03FU-B,LF
Quantity
80
Availability
In Stock
Package
6-TSSOP, SC-88, SOT-363
Packaging
Tape & Reel (TR); Cut Tape (CT)
Description
TRANS 2NPN DUAL 20V 300MA US6
Detailed Description
Bipolar (BJT) Transistor Array 2 NPN (Dual) 20V 300mA 30MHz 200mW Surface Mount US6
Datasheet
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Delivery
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AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
Series
-
Packaging
Tape & Reel (TR); Cut Tape (CT)
Power - Max
200mW
Manufacturer
Toshiba Semiconductor and Storage
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Transistor Type
2 NPN (Dual)
Base Product Number
HN1C03
Operating Temperature
150°C (TJ)
Frequency - Transition
30MHz
Supplier Device Package
US6
Vce Saturation (Max) @ Ib, Ic
100mV @ 3mA, 30A
Current - Collector (Ic) (Max)
300mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
350 @ 4mA, 2V
Voltage - Collector Emitter Breakdown (Max)
20V
AttributeValue
Series-
PackagingTape & Reel (TR); Cut Tape (CT)
Power - Max200mW
ManufacturerToshiba Semiconductor and Storage
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Transistor Type2 NPN (Dual)
Base Product NumberHN1C03
Operating Temperature150°C (TJ)
Frequency - Transition30MHz
Supplier Device PackageUS6
Vce Saturation (Max) @ Ib, Ic100mV @ 3mA, 30A
Current - Collector (Ic) (Max)300mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce350 @ 4mA, 2V
Voltage - Collector Emitter Breakdown (Max)20V

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Packaging Process

Product before packing
Step1: Product
Product in vacuum packaging
Step2: Vacuum Packaging
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Step3: Anti-Static Bag
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