Toshiba Semiconductor and Storage 2SC2713-BL,LF

Toshiba Semiconductor and Storage 2SC2713-BL,LF electronic component product image

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Manufacturer No
2SC2713-BL,LF
Quantity
6,090
Availability
In Stock
Package
TO-236-3, SC-59, SOT-23-3
Packaging
Tape & Reel (TR); Cut Tape (CT)
Description
TRANS NPN 120V 0.1A TO-236
Detailed Description
Bipolar (BJT) Transistor NPN 120 V 100 mA 100MHz 150 mW Surface Mount TO-236
Datasheet
Payment
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Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
Mfr
Toshiba Semiconductor and Storage
Series
-
Packaging
Tape & Reel (TR); Cut Tape (CT)
Power - Max
150 mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
NPN
Base Product Number
2SC2713
Operating Temperature
125°C (TJ)
Frequency - Transition
100MHz
Supplier Device Package
TO-236
Vce Saturation (Max) @ Ib, Ic
300mV @ 1mA, 10mA
Current - Collector (Ic) (Max)
100 mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
350 @ 2mA, 6V
Voltage - Collector Emitter Breakdown (Max)
120 V
AttributeValue
MfrToshiba Semiconductor and Storage
Series-
PackagingTape & Reel (TR); Cut Tape (CT)
Power - Max150 mW
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Transistor TypeNPN
Base Product Number2SC2713
Operating Temperature125°C (TJ)
Frequency - Transition100MHz
Supplier Device PackageTO-236
Vce Saturation (Max) @ Ib, Ic300mV @ 1mA, 10mA
Current - Collector (Ic) (Max)100 mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce350 @ 2mA, 6V
Voltage - Collector Emitter Breakdown (Max)120 V

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Packaging Process

Product before packing
Step1: Product
Product in vacuum packaging
Step2: Vacuum Packaging
Product in anti-static bag
Step3: Anti-Static Bag
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