Step1: Product
Toshiba Semiconductor and Storage 2SA1680,F(J
Images are for reference only
Manufacturer
Manufacturer No
2SA1680,F(J
Package
TO-226-3, TO-92-3 Long Body
Packaging
Bulk
Description
TRANS PNP 50V 2A TO-92MOD
Detailed Description
Bipolar (BJT) Transistor PNP 50 V 2 A 100MHz 900 mW Through Hole TO-92MOD
Datasheet
Payment
Delivery
Mfr
Toshiba Semiconductor and Storage
Series
-
Packaging
Bulk
Power - Max
900 mW
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Transistor Type
PNP
Base Product Number
2SA1680
Operating Temperature
150°C (TJ)
Frequency - Transition
100MHz
Supplier Device Package
TO-92MOD
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 1A
Current - Collector (Ic) (Max)
2 A
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 100mA, 2V
Voltage - Collector Emitter Breakdown (Max)
50 V
| Attribute | Value |
|---|---|
| Mfr | Toshiba Semiconductor and Storage |
| Series | - |
| Packaging | Bulk |
| Power - Max | 900 mW |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Transistor Type | PNP |
| Base Product Number | 2SA1680 |
| Operating Temperature | 150°C (TJ) |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92MOD |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 1A |
| Current - Collector (Ic) (Max) | 2 A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 2V |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
Purchase & Inquiry
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Packaging Process
Step2: Vacuum Packaging
Step3: Anti-Static Bag
Step4: Package Boxes
Step5: Bar-Code Shipping Tags
Step6: Shipping
