Step1: Product
Taiwan Semiconductor Corporation TSM7NC65CF C0G
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Manufacturer
Manufacturer No
TSM7NC65CF C0G
Package
TO-220-3 Full Pack
Packaging
Tube
Description
MOSFET N-CH 650V 7A ITO220S
Detailed Description
N-Channel 650 V 7A (Tc) 44.6W (Tc) Through Hole ITO-220S
Datasheet
Payment
Delivery
Mfr
Taiwan Semiconductor Corporation
Grade
-
Series
-
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Mounting Type
Through Hole
Qualification
-
Package / Case
TO-220-3 Full Pack
Vgs(th) (Max) @ Id
4.5V @ 250µA
Base Product Number
TSM7
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
1.35Ohm @ 2A, 10V
Power Dissipation (Max)
44.6W (Tc)
Supplier Device Package
ITO-220S
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 10 V
Drain to Source Voltage (Vdss)
650 V
Input Capacitance (Ciss) (Max) @ Vds
1169 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
7A (Tc)
| Attribute | Value |
|---|---|
| Mfr | Taiwan Semiconductor Corporation |
| Grade | - |
| Series | - |
| FET Type | N-Channel |
| Packaging | Tube |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Qualification | - |
| Package / Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Base Product Number | TSM7 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 1.35Ohm @ 2A, 10V |
| Power Dissipation (Max) | 44.6W (Tc) |
| Supplier Device Package | ITO-220S |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1169 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
Purchase & Inquiry
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Packaging Process
Step2: Vacuum Packaging
Step3: Anti-Static Bag
Step4: Package Boxes
Step5: Bar-Code Shipping Tags
Step6: Shipping
