10-13 NOV 2026 · Munich, Germany

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STMicroelectronics STW70N60M2

STMicroelectronics STW70N60M2 electronic component product image

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Manufacturer
Manufacturer No
STW70N60M2
Date Code
2103
Quantity
21
Availability
In Stock
Package
TO-247-3
Packaging
Tube
Description
MOSFET N-CH 600V 68A TO247
Detailed Description
N-Channel 600 V 68A (Tc) 450W (Tc) Through Hole TO-247
Datasheet
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
Mfr
STMicroelectronics
Grade
-
Series
MDmesh™ II Plus
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±25V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Mounting Type
Through Hole
Qualification
-
Package / Case
TO-247-3
Vgs(th) (Max) @ Id
4V @ 250µA
Base Product Number
STW70
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
40mOhm @ 34A, 10V
Power Dissipation (Max)
450W (Tc)
Supplier Device Package
TO-247
Gate Charge (Qg) (Max) @ Vgs
118 nC @ 10 V
Drain to Source Voltage (Vdss)
600 V
Input Capacitance (Ciss) (Max) @ Vds
5200 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
68A (Tc)
AttributeValue
MfrSTMicroelectronics
Grade-
SeriesMDmesh™ II Plus
FET TypeN-Channel
PackagingTube
Vgs (Max)±25V
TechnologyMOSFET (Metal Oxide)
FET Feature-
Mounting TypeThrough Hole
Qualification-
Package / CaseTO-247-3
Vgs(th) (Max) @ Id4V @ 250µA
Base Product NumberSTW70
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs40mOhm @ 34A, 10V
Power Dissipation (Max)450W (Tc)
Supplier Device PackageTO-247
Gate Charge (Qg) (Max) @ Vgs118 nC @ 10 V
Drain to Source Voltage (Vdss)600 V
Input Capacitance (Ciss) (Max) @ Vds5200 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C68A (Tc)

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