10-13 NOV 2026 · Munich, Germany

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STMicroelectronics STH270N8F7-2

STMicroelectronics STH270N8F7-2 electronic component product image

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Manufacturer
Manufacturer No
STH270N8F7-2
Quantity
10
Availability
In Stock
Package
H2PAK
Packaging
Tape and Reel
Description
Trans MOSFET N-CH 80V 180A 3-Pin(2+Tab) H2PAK T/R
Detailed Description
Thanks to STMicroelectronics, both your amplification and switching needs can be taken care of with one component: the STH270N8F7-2 power MOSFET. Its maximum power dissipation is 315000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with stripfet technology. This N channel MOSFET transistor operates in enhancement mode.
Datasheet
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
HTS
8541.29.00.55
Tab
Tab
PPAP
No
SVHC
Yes
EU RoHS
Compliant with Exemption
Category
Power MOSFET
Mounting
Surface Mount
ECCN (US)
EAR99
Packaging
Tape and Reel
Pin Count
3
Automotive
No
Lead Shape
Gull-wing
PCB changed
2
Availability
No Stock Available
Channel Mode
Enhancement
Channel Type
N
Configuration
Single
Package Width
9.17(Max)
Package Height
4.8(Max)
Package Length
10.4(Max)
Supplier Package
H2PAK
Maximum IDSS (uA)
1
Process Technology
STripFET
Manufacturer Lead Time
22 weeks
SVHC Exceeds Threshold
Yes
Supplier Temperature Grade
Industrial
Number of Elements per Chip
1
Maximum Power Dissipation (mW)
315000
Typical Gate Charge @ 10V (nC)
225
Typical Gate Charge @ Vgs (nC)
225@10V
Maximum Gate-Source Voltage (V)
±20
Maximum Drain-Source Voltage (V)
80
Maximum Gate Threshold Voltage (V)
4
Maximum Operating Temperature (°C)
175
Minimum Operating Temperature (°C)
-55
Maximum Continuous Drain Current (A)
180
Typical Input Capacitance @ Vds (pF)
13600@50V
Maximum Drain-Source Resistance (mOhm)
2.1@10V
Maximum Gate-Source Leakage Current (nA)
100
AttributeValue
HTS8541.29.00.55
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
CategoryPower MOSFET
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
AvailabilityNo Stock Available
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.17(Max)
Package Height4.8(Max)
Package Length10.4(Max)
Supplier PackageH2PAK
Maximum IDSS (uA)1
Process TechnologySTripFET
Manufacturer Lead Time22 weeks
SVHC Exceeds ThresholdYes
Supplier Temperature GradeIndustrial
Number of Elements per Chip1
Maximum Power Dissipation (mW)315000
Typical Gate Charge @ 10V (nC)225
Typical Gate Charge @ Vgs (nC)225@10V
Maximum Gate-Source Voltage (V)±20
Maximum Drain-Source Voltage (V)80
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)180
Typical Input Capacitance @ Vds (pF)13600@50V
Maximum Drain-Source Resistance (mOhm)2.1@10V
Maximum Gate-Source Leakage Current (nA)100

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