10-13 NOV 2026 · Munich, Germany

MEET FIXCHIPS (C3-161) AT electronica 2026

Sanyo 5LN01SS-TL-E

Sanyo 5LN01SS-TL-E electronic component product image

Image is only for reference

Manufacturer
Manufacturer No
5LN01SS-TL-E
Package
SC-81
Packaging
Bulk
Description
N-CHANNEL SILICON MOSFET
Detailed Description
N-Channel 50 V 100mA (Ta) 150mW (Ta) Surface Mount 3-SSFP
Datasheet
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
Mfr
Sanyo
Grade
-
Series
-
FET Type
N-Channel
Packaging
Bulk
Vgs (Max)
±10V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Mounting Type
Surface Mount
Qualification
-
Package / Case
SC-81
Vgs(th) (Max) @ Id
-
Base Product Number
5LN01
Operating Temperature
150°C (TJ)
Rds On (Max) @ Id, Vgs
7.8Ohm @ 50mA, 4V
Power Dissipation (Max)
150mW (Ta)
Supplier Device Package
3-SSFP
Gate Charge (Qg) (Max) @ Vgs
1.57 nC @ 10 V
Drain to Source Voltage (Vdss)
50 V
Input Capacitance (Ciss) (Max) @ Vds
6600 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4V
Current - Continuous Drain (Id) @ 25°C
100mA (Ta)
AttributeValue
MfrSanyo
Grade-
Series-
FET TypeN-Channel
PackagingBulk
Vgs (Max)±10V
TechnologyMOSFET (Metal Oxide)
FET Feature-
Mounting TypeSurface Mount
Qualification-
Package / CaseSC-81
Vgs(th) (Max) @ Id-
Base Product Number5LN01
Operating Temperature150°C (TJ)
Rds On (Max) @ Id, Vgs7.8Ohm @ 50mA, 4V
Power Dissipation (Max)150mW (Ta)
Supplier Device Package3-SSFP
Gate Charge (Qg) (Max) @ Vgs1.57 nC @ 10 V
Drain to Source Voltage (Vdss)50 V
Input Capacitance (Ciss) (Max) @ Vds6600 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4V
Current - Continuous Drain (Id) @ 25°C100mA (Ta)

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