ROHM Semiconductor R6010YNXC7G
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| Attribute | Value |
|---|---|
| Mfr | Rohm Semiconductor |
| Grade | - |
| Series | - |
| FET Type | N-Channel |
| Packaging | Tube |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Qualification | - |
| Package / Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ Id | 6V @ 1.2mA |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 390mOhm @ 4.2A, 12V |
| Power Dissipation (Max) | 47W (Tc) |
| Supplier Device Package | TO-220FM |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V, 12V |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
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Packaging Process
