PN Junction Semiconductor P3D06008I2
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| Attribute | Value |
|---|---|
| Mfr | PN Junction Semiconductor |
| Speed | Zero Recovery Time > 500mA (Io) |
| Series | P3D |
| Packaging | Tube |
| Technology | SiC (Silicon Carbide) Schottky |
| Package / Case | TO-220I-2 |
| Supplier Device Package | TO-220I-2 |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 36 µA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 21A |
| Operating Temperature - Junction | -55°C ~ 175°C |
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Packaging Process
