10-13 NOV 2026 · Munich, Germany

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onsemi NTHD4508NT1G

onsemi NTHD4508NT1G electronic component product image

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Manufacturer
Manufacturer No
NTHD4508NT1G
Date Code
22+
Quantity
2,896
Availability
In Stock
Package
8-SMD, Flat Leads
Packaging
Tape & Reel (TR)
Description
MOSFET 2N-CH 20V 3A CHIPFET
Detailed Description
Mosfet Array 20V 3A 1.13W Surface Mount ChipFET™
Datasheet
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
Series
-
Packaging
Tape & Reel (TR)
Technology
MOSFET (Metal Oxide)
FET Feature
Logic Level Gate
Power - Max
1.13W
Manufacturer
onsemi
Configuration
2 N-Channel (Dual)
Mounting Type
Surface Mount
Package / Case
8-SMD, Flat Leads
Vgs(th) (Max) @ Id
1.2V @ 250µA
Base Product Number
NTHD4508
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
75mOhm @ 3.1A, 4.5V
Supplier Device Package
ChipFET™
Gate Charge (Qg) (Max) @ Vgs
4nC @ 4.5V
Drain to Source Voltage (Vdss)
20V
Input Capacitance (Ciss) (Max) @ Vds
180pF @ 10V
Current - Continuous Drain (Id) @ 25°C
3A
AttributeValue
Series-
PackagingTape & Reel (TR)
TechnologyMOSFET (Metal Oxide)
FET FeatureLogic Level Gate
Power - Max1.13W
Manufactureronsemi
Configuration2 N-Channel (Dual)
Mounting TypeSurface Mount
Package / Case8-SMD, Flat Leads
Vgs(th) (Max) @ Id1.2V @ 250µA
Base Product NumberNTHD4508
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs75mOhm @ 3.1A, 4.5V
Supplier Device PackageChipFET™
Gate Charge (Qg) (Max) @ Vgs4nC @ 4.5V
Drain to Source Voltage (Vdss)20V
Input Capacitance (Ciss) (Max) @ Vds180pF @ 10V
Current - Continuous Drain (Id) @ 25°C3A

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