10-13 NOV 2026 · Munich, Germany

MEET FIXCHIPS (C3-161) AT electronica 2026

onsemi NST856MTWFTBG

onsemi NST856MTWFTBG electronic component product image

Image is only for reference

Manufacturer
Manufacturer No
NST856MTWFTBG
Package
3-XFDFN
Packaging
Tape & Reel (TR); Cut Tape (CT)
Description
TRANS PNP 65V 0.1A 3XDFNW
Detailed Description
Bipolar (BJT) Transistor PNP 65 V 100 mA 100MHz 650 mW Surface Mount, Wettable Flank 3-XDFNW (1x1)
Datasheet
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
Mfr
onsemi
Grade
-
Series
-
Packaging
Tape & Reel (TR); Cut Tape (CT)
Power - Max
650 mW
Mounting Type
Surface Mount, Wettable Flank
Qualification
-
Package / Case
3-XFDFN
Transistor Type
PNP
Operating Temperature
-65°C ~ 150°C (TJ)
Frequency - Transition
100MHz
Supplier Device Package
3-XDFNW (1x1)
Vce Saturation (Max) @ Ib, Ic
900mV @ 5mA, 100mA
Current - Collector (Ic) (Max)
100 mA
Current - Collector Cutoff (Max)
15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
220 @ 2mA, 5V
Voltage - Collector Emitter Breakdown (Max)
65 V
AttributeValue
Mfronsemi
Grade-
Series-
PackagingTape & Reel (TR); Cut Tape (CT)
Power - Max650 mW
Mounting TypeSurface Mount, Wettable Flank
Qualification-
Package / Case3-XFDFN
Transistor TypePNP
Operating Temperature-65°C ~ 150°C (TJ)
Frequency - Transition100MHz
Supplier Device Package3-XDFNW (1x1)
Vce Saturation (Max) @ Ib, Ic900mV @ 5mA, 100mA
Current - Collector (Ic) (Max)100 mA
Current - Collector Cutoff (Max)15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce220 @ 2mA, 5V
Voltage - Collector Emitter Breakdown (Max)65 V

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Packaging Process