onsemi NST3906MX2T5G

onsemi NST3906MX2T5G electronic component product image

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Manufacturer
Manufacturer No
NST3906MX2T5G
Availability
In Stock
Package
3-XFDFN
Packaging
Tape & Reel (TR); Cut Tape (CT)
Description
TRANS PNP 40V 0.2A 3X2DFN
Detailed Description
Bipolar (BJT) Transistor PNP 40 V 200 mA 250MHz 165 mW Surface Mount 3-X2DFN (1x0.6)
Datasheet
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
Mfr
onsemi
Series
-
Packaging
Tape & Reel (TR); Cut Tape (CT)
Power - Max
165 mW
Mounting Type
Surface Mount
Package / Case
3-XFDFN
Transistor Type
PNP
Base Product Number
NST3906
Operating Temperature
-55°C ~ 150°C (TJ)
Frequency - Transition
250MHz
Supplier Device Package
3-X2DFN (1x0.6)
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 50mA
Current - Collector (Ic) (Max)
200 mA
Current - Collector Cutoff (Max)
50nA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA, 1V
Voltage - Collector Emitter Breakdown (Max)
40 V
AttributeValue
Mfronsemi
Series-
PackagingTape & Reel (TR); Cut Tape (CT)
Power - Max165 mW
Mounting TypeSurface Mount
Package / Case3-XFDFN
Transistor TypePNP
Base Product NumberNST3906
Operating Temperature-55°C ~ 150°C (TJ)
Frequency - Transition250MHz
Supplier Device Package3-X2DFN (1x0.6)
Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 50mA
Current - Collector (Ic) (Max)200 mA
Current - Collector Cutoff (Max)50nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 1V
Voltage - Collector Emitter Breakdown (Max)40 V

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Packaging Process

Product before packing
Step1: Product
Product in vacuum packaging
Step2: Vacuum Packaging
Product in anti-static bag
Step3: Anti-Static Bag
Individual packaging box
Step4: Package Boxes
Packaging box with shipping label
Step5: Bar-Code Shipping Tags
Shipping by cargo vessel
Step6: Shipping