
onsemi FQPF7N60
Mfr
onsemi
Grade
-
Series
QFET®
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Mounting Type
Through Hole
Qualification
-
Package / Case
TO-220-3 Full Pack
Vgs(th) (Max) @ Id
5V @ 250µA
Base Product Number
FQPF7
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
1Ohm @ 2.2A, 10V
Power Dissipation (Max)
48W (Tc)
Supplier Device Package
TO-220F-3
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
Drain to Source Voltage (Vdss)
600 V
Input Capacitance (Ciss) (Max) @ Vds
1430 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
4.3A (Tc)
| Attribute | Value |
|---|---|
| Mfr | onsemi |
| Grade | - |
| Series | QFET® |
| FET Type | N-Channel |
| Packaging | Tube |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Qualification | - |
| Package / Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Base Product Number | FQPF7 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 2.2A, 10V |
| Power Dissipation (Max) | 48W (Tc) |
| Supplier Device Package | TO-220F-3 |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1430 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) |
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Packaging Process

Step1: Product

Step2: Vacuum Packaging

Step3: Anti-Static Bag

Step4: Package Boxes

Step5: Bar-Code Shipping Tags

Step6: Shipping

















