onsemi FCH041N65F-F085
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| Attribute | Value |
|---|---|
| PPAP | Yes |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Category | Power MOSFET |
| Packaging | Tube |
| Automotive | Yes |
| Availability | No Stock Available |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Maximum IDSS (uA) | 10 |
| Manufacturer Lead Time | 16 weeks |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 8 |
| Typical Rise Time (ns) | 39 |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 595000 |
| Typical Gate Charge @ 10V (nC) | 234 |
| Typical Gate Charge @ Vgs (nC) | 234@10V |
| Maximum Gate-Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 55 |
| Maximum Drain-Source Voltage (V) | 650 |
| Typical Turn-Off Delay Time (ns) | 183 |
| Maximum Gate Threshold Voltage (V) | 5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 76 |
| Typical Input Capacitance @ Vds (pF) | 10200@25V |
| Maximum Drain-Source Resistance (mOhm) | 41@10V |
| Maximum Gate-Source Leakage Current (nA) | 100 |
Purchase & Inquiry
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Packaging Process
