
onsemi BS170
Mfr
onsemi
Grade
-
Series
-
FET Type
N-Channel
Packaging
Bulk
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Mounting Type
Through Hole
Qualification
-
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Vgs(th) (Max) @ Id
3V @ 1mA
Base Product Number
BS170
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
5Ohm @ 200mA, 10V
Power Dissipation (Max)
830mW (Ta)
Supplier Device Package
TO-92-3
Drain to Source Voltage (Vdss)
60 V
Input Capacitance (Ciss) (Max) @ Vds
40 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
500mA (Ta)
| Attribute | Value |
|---|---|
| Mfr | onsemi |
| Grade | - |
| Series | - |
| FET Type | N-Channel |
| Packaging | Bulk |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Qualification | - |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Base Product Number | BS170 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 200mA, 10V |
| Power Dissipation (Max) | 830mW (Ta) |
| Supplier Device Package | TO-92-3 |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 40 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 500mA (Ta) |
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Packaging Process

Step1: Product

Step2: Vacuum Packaging

Step3: Anti-Static Bag

Step4: Package Boxes

Step5: Bar-Code Shipping Tags

Step6: Shipping





















