onsemi 2SC3916-AC

onsemi 2SC3916-AC electronic component product image

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Manufacturer
Manufacturer No
2SC3916-AC
Package
3-SSIP
Packaging
Bulk
Description
SMALL SIGNAL BIPOLAR TRANSTR NPN
Detailed Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 500 mA 200 MHz 300 mW Through Hole 3-SPA
Datasheet
Payment
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Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
Grade
-
Series
-
Packaging
Bulk
Power - Max
300 mW
Manufacturer
onsemi
Mounting Type
Through Hole
Qualification
-
Package / Case
3-SSIP
Transistor Type
NPN - Pre-Biased
Resistors Included
R1 and R2
Resistor - Base (R1)
10 kOhms
Frequency - Transition
200 MHz
Supplier Device Package
3-SPA
Resistor - Emitter Base (R2)
10 kOhms
Vce Saturation (Max) @ Ib, Ic
300mV @ 1mA, 20mA
Current - Collector (Ic) (Max)
500 mA
Current - Collector Cutoff (Max)
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max)
50 V
AttributeValue
Grade-
Series-
PackagingBulk
Power - Max300 mW
Manufactureronsemi
Mounting TypeThrough Hole
Qualification-
Package / Case3-SSIP
Transistor TypeNPN - Pre-Biased
Resistors IncludedR1 and R2
Resistor - Base (R1)10 kOhms
Frequency - Transition200 MHz
Supplier Device Package3-SPA
Resistor - Emitter Base (R2)10 kOhms
Vce Saturation (Max) @ Ib, Ic300mV @ 1mA, 20mA
Current - Collector (Ic) (Max)500 mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max)50 V

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Packaging Process

Product before packing
Step1: Product
Product in vacuum packaging
Step2: Vacuum Packaging
Product in anti-static bag
Step3: Anti-Static Bag
Individual packaging box
Step4: Package Boxes
Packaging box with shipping label
Step5: Bar-Code Shipping Tags
Shipping by cargo vessel
Step6: Shipping