10-13 NOV 2026 · Munich, Germany

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onsemi 2SA1418S-TD-E

onsemi 2SA1418S-TD-E electronic component product image

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Manufacturer
Manufacturer No
2SA1418S-TD-E
Quantity
15
Availability
In Stock
Package
SOT-89
Packaging
Tape and Reel
Description
Trans GP BJT PNP 160V 0.7A 1300mW 4-Pin(3+Tab) SOT-89 T/R
Detailed Description
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile PNP 2SA1418S-TD-E GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1300 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 160 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
Datasheet
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
HTS
8541.29.00.55
Tab
Tab
PPAP
No
SVHC
Yes
Type
PNP
EU RoHS
Compliant with Exemption
Category
Bipolar Small Signal
Material
Si
Mounting
Surface Mount
ECCN (US)
EAR99
Packaging
Tape and Reel
Pin Count
4
Automotive
No
Lead Shape
Flat
PCB changed
3
Availability
In Stock
Configuration
Single Dual Collector
Package Width
2.5
Package Height
1.5
Package Length
4.5
Supplier Package
SOT-89
Standard Package Name
SOT
Manufacturer Lead Time
35 weeks
SVHC Exceeds Threshold
Yes
Minimum DC Current Gain
140@100mA@5V
Number of Elements per Chip
1
Maximum Power Dissipation (mW)
1300
Maximum Base-Emitter Voltage (V)
6
Maximum DC Collector Current (A)
0.7
Maximum Collector-Base Voltage (V)
180
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-55
Operating Junction Temperature (°C)
150
Maximum Collector-Emitter Voltage (V)
160
Maximum Collector Cut-Off Current (nA)
100
Maximum Base-Emitter Saturation Voltage (V)
1.2@25mA@250mA
Maximum Collector-Emitter Saturation Voltage (V)
0.5@25mA@250mA
AttributeValue
HTS8541.29.00.55
TabTab
PPAPNo
SVHCYes
TypePNP
EU RoHSCompliant with Exemption
CategoryBipolar Small Signal
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeFlat
PCB changed3
AvailabilityIn Stock
ConfigurationSingle Dual Collector
Package Width2.5
Package Height1.5
Package Length4.5
Supplier PackageSOT-89
Standard Package NameSOT
Manufacturer Lead Time35 weeks
SVHC Exceeds ThresholdYes
Minimum DC Current Gain140@100mA@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1300
Maximum Base-Emitter Voltage (V)6
Maximum DC Collector Current (A)0.7
Maximum Collector-Base Voltage (V)180
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)150
Maximum Collector-Emitter Voltage (V)160
Maximum Collector Cut-Off Current (nA)100
Maximum Base-Emitter Saturation Voltage (V)1.2@25mA@250mA
Maximum Collector-Emitter Saturation Voltage (V)0.5@25mA@250mA

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