10-13 NOV 2026 · Munich, Germany

MEET FIXCHIPS (C3-161) AT electronica 2026

NXP Semiconductors MRF24300NR3

NXP Semiconductors MRF24300NR3 electronic component product image

Image is only for reference

Manufacturer
Manufacturer No
MRF24300NR3
Package
OM-780 EP
Packaging
Tape and Reel
Description
Trans RF MOSFET N-CH 65V 3-Pin OM-780 EP T/R
Datasheet
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
HTS
8541.29.00.75
PPAP
No
SVHC
Yes
EU RoHS
Compliant
Mounting
Surface Mount
ECCN (US)
EAR99
Packaging
Tape and Reel
Pin Count
3
Automotive
No
PCB changed
3
Availability
No Stock Available
Channel Mode
Enhancement
Channel Type
N
Maximum VSWR
5
Configuration
Single
Package Width
10.01(Max)
Package Height
3.86(Max)
Package Length
20.62(Max)
Supplier Package
OM-780 EP
Maximum IDSS (uA)
10
Mode of Operation
CW
Maximum Frequency (MHz)
2450
Minimum Frequency (MHz)
2400
Typical Power Gain (dB)
13.1
Maximum Output Power (W)
330
Number of Elements per Chip
1
Typical Drain Efficiency (%)
56.9
Maximum Power Dissipation (mW)
833000
Maximum Gate-Source Voltage (V)
10
Maximum Drain-Source Voltage (V)
65
Maximum Gate Threshold Voltage (V)
2.4
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-40
Maximum Gate-Source Leakage Current (nA)
1000
AttributeValue
HTS8541.29.00.75
PPAPNo
SVHCYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
AvailabilityNo Stock Available
Channel ModeEnhancement
Channel TypeN
Maximum VSWR5
ConfigurationSingle
Package Width10.01(Max)
Package Height3.86(Max)
Package Length20.62(Max)
Supplier PackageOM-780 EP
Maximum IDSS (uA)10
Mode of OperationCW
Maximum Frequency (MHz)2450
Minimum Frequency (MHz)2400
Typical Power Gain (dB)13.1
Maximum Output Power (W)330
Number of Elements per Chip1
Typical Drain Efficiency (%)56.9
Maximum Power Dissipation (mW)833000
Maximum Gate-Source Voltage (V)10
Maximum Drain-Source Voltage (V)65
Maximum Gate Threshold Voltage (V)2.4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Gate-Source Leakage Current (nA)1000

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Packaging Process