10-13 NOV 2026 · Munich, Germany

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NXP Semiconductors MRF101AN-2MHZ4UP

NXP Semiconductors MRF101AN-2MHZ4UP electronic component product image

Image is only for reference

Manufacturer
Manufacturer No
MRF101AN-2MHZ4UP
Package
TO-220
Description
Trans RF MOSFET N-CH 133V 3-Pin(3+Tab) TO-220
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
Tab
Tab
PPAP
No
Type
MOSFET
EU RoHS
Not Compliant
Mounting
Through Hole
ECCN (US)
EAR99
Pin Count
3
Automotive
No
PCB changed
3
Availability
No Stock Available
Channel Mode
Enhancement
Channel Type
N
Configuration
Single
Package Width
4.83(Max)
Package Height
8.39(Min)
Package Length
10.47(Max)
Supplier Package
TO-220
Mode of Operation
CW
Standard Package Name
TO
Maximum Frequency (MHz)
250
Minimum Frequency (MHz)
1.8
Typical Power Gain (dB)
21.1
Maximum Output Power (W)
115(Typ)
Number of Elements per Chip
1
Typical Drain Efficiency (%)
76.7
Maximum Power Dissipation (mW)
182000
Maximum Gate-Source Voltage (V)
10
Maximum Drain-Source Voltage (V)
133
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-40
Typical Input Capacitance @ Vds (pF)
149@50V
AttributeValue
TabTab
PPAPNo
TypeMOSFET
EU RoHSNot Compliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed3
AvailabilityNo Stock Available
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.83(Max)
Package Height8.39(Min)
Package Length10.47(Max)
Supplier PackageTO-220
Mode of OperationCW
Standard Package NameTO
Maximum Frequency (MHz)250
Minimum Frequency (MHz)1.8
Typical Power Gain (dB)21.1
Maximum Output Power (W)115(Typ)
Number of Elements per Chip1
Typical Drain Efficiency (%)76.7
Maximum Power Dissipation (mW)182000
Maximum Gate-Source Voltage (V)10
Maximum Drain-Source Voltage (V)133
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Typical Input Capacitance @ Vds (pF)149@50V

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