NXP Semiconductors AFT09S200W02NR3
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| Attribute | Value |
|---|---|
| HTS | 8541.29.00.55 |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant |
| Mounting | Screw |
| ECCN (US) | 5A991g. |
| Pin Count | 3 |
| Automotive | No |
| PCB changed | 3 |
| Availability | No Stock Available |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum VSWR | 10 |
| Package Width | 9.91(Max) |
| Package Height | 4.32(Max) |
| Package Length | 34.16(Max) |
| Supplier Package | NI-780 |
| Maximum IDSS (uA) | 10 |
| Mode of Operation | 1-Carrier W-CDMA |
| Maximum Frequency (MHz) | 960 |
| Minimum Frequency (MHz) | 716 |
| Typical Power Gain (dB) | 19.2 |
| Maximum Output Power (W) | 56(Typ) |
| Typical Drain Efficiency (%) | 36.5 |
| Maximum Gate-Source Voltage (V) | 10 |
| Maximum Drain-Source Voltage (V) | 70 |
| Maximum Gate Threshold Voltage (V) | 2 |
| Maximum Operating Temperature (°C) | 125 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Gate-Source Leakage Current (nA) | 1000 |
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