10-13 NOV 2026 · Munich, Germany

MEET FIXCHIPS (C3-161) AT electronica 2026

NXP Semiconductors AFM906NT1

NXP Semiconductors AFM906NT1 electronic component product image

Image is only for reference

Manufacturer
Manufacturer No
AFM906NT1
Quantity
39
Availability
In Stock
Package
DFN EP
Description
Trans RF MOSFET N-CH 30V 16-Pin DFN EP T/R
Datasheet
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
HTS
8541.29.00.55
PPAP
No
SVHC
Yes
EU RoHS
Compliant
Mounting
Surface Mount
ECCN (US)
5A991g.
Pin Count
16
Automotive
No
PCB changed
16
Availability
In Stock (cut strips)
Channel Mode
Enhancement
Channel Type
N
Maximum VSWR
65
Package Width
4
Package Height
0.95(Max)
Package Length
6
Supplier Package
DFN EP
Maximum IDSS (uA)
2
Mode of Operation
CW
Standard Package Name
DFN
Manufacturer Lead Time
99 weeks
Maximum Frequency (MHz)
941
Minimum Frequency (MHz)
136
Typical Power Gain (dB)
20.3
Maximum Output Power (W)
6.8(Typ)
Typical Drain Efficiency (%)
70.8
Maximum Power Dissipation (mW)
65800
Maximum Gate-Source Voltage (V)
12
Maximum Drain-Source Voltage (V)
30
Maximum Gate Threshold Voltage (V)
2.6
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-40
Typical Forward Transconductance (S)
4.4
Typical Input Capacitance @ Vds (pF)
Typical Output Capacitance @ Vds (pF)
Maximum Gate-Source Leakage Current (nA)
500
AttributeValue
HTS8541.29.00.55
PPAPNo
SVHCYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)5A991g.
Pin Count16
AutomotiveNo
PCB changed16
AvailabilityIn Stock (cut strips)
Channel ModeEnhancement
Channel TypeN
Maximum VSWR65
Package Width4
Package Height0.95(Max)
Package Length6
Supplier PackageDFN EP
Maximum IDSS (uA)2
Mode of OperationCW
Standard Package NameDFN
Manufacturer Lead Time99 weeks
Maximum Frequency (MHz)941
Minimum Frequency (MHz)136
Typical Power Gain (dB)20.3
Maximum Output Power (W)6.8(Typ)
Typical Drain Efficiency (%)70.8
Maximum Power Dissipation (mW)65800
Maximum Gate-Source Voltage (V)12
Maximum Drain-Source Voltage (V)30
Maximum Gate Threshold Voltage (V)2.6
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Typical Forward Transconductance (S)4.4
Typical Input Capacitance @ Vds (pF)[email protected]
Typical Output Capacitance @ Vds (pF)[email protected]
Maximum Gate-Source Leakage Current (nA)500

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