NoMIS Power NH3T008MP120F2

NoMIS Power NH3T008MP120F2 electronic component product image

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Manufacturer
Manufacturer No
NH3T008MP120F2
Package
Module
Packaging
Tray
Description
1200 V, 8 m SiC Half-Bridge Powe
Detailed Description
Mosfet Array 1200V (1.2kV) 200A (Tc) Chassis Mount
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
Grade
-
Series
1200
Packaging
Tray
Technology
Silicon Carbide (SiC)
FET Feature
-
Manufacturer
NoMIS Power
Configuration
2 N-Channel (Half Bridge)
Mounting Type
Chassis Mount
Qualification
-
Package / Case
Module
Vgs(th) (Max) @ Id
4V @ 100mA
Operating Temperature
-55°C ~ 175°C (TJ)
Supplier Device Package
-
Gate Charge (Qg) (Max) @ Vgs
530nC @ 20V
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
200A (Tc)
AttributeValue
Grade-
Series1200
PackagingTray
TechnologySilicon Carbide (SiC)
FET Feature-
ManufacturerNoMIS Power
Configuration2 N-Channel (Half Bridge)
Mounting TypeChassis Mount
Qualification-
Package / CaseModule
Vgs(th) (Max) @ Id4V @ 100mA
Operating Temperature-55°C ~ 175°C (TJ)
Supplier Device Package-
Gate Charge (Qg) (Max) @ Vgs530nC @ 20V
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C200A (Tc)

Purchase & Inquiry

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Payment Options

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RFQ (Request for Quote)

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Important Notes

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2. Product availability and pricing may change over time. Our sales manager will verify the details of your order and contact you if any changes or confirmation are required.

Packaging Process

Product before packing
Step1: Product
Product in vacuum packaging
Step2: Vacuum Packaging
Product in anti-static bag
Step3: Anti-Static Bag
Individual packaging box
Step4: Package Boxes
Packaging box with shipping label
Step5: Bar-Code Shipping Tags
Shipping by cargo vessel
Step6: Shipping