Step1: Product
NoMIS Power N3PT1000MP170D
Images are for reference only
Manufacturer
Manufacturer No
N3PT1000MP170D
Package
TO-247-3
Packaging
Tube
Description
1700 V 1000 m SiC MOSFET TO-247-
Detailed Description
N-Channel 1700 V 5.1A 56W (Tc) Through Hole TO-247-3
Datasheet
Payment
Delivery
Mfr
NoMIS Power
Grade
-
Series
1700
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
+25V, -5V
Technology
SiCFET (Silicon Carbide)
FET Feature
-
Mounting Type
Through Hole
Qualification
-
Package / Case
TO-247-3
Vgs(th) (Max) @ Id
4V @ 1mA
Operating Temperature
-55°C ~ 175°C
Rds On (Max) @ Id, Vgs
1Ohm @ 1A, 20V
Power Dissipation (Max)
56W (Tc)
Supplier Device Package
TO-247-3
Gate Charge (Qg) (Max) @ Vgs
29.5 nC @ 20 V
Drain to Source Voltage (Vdss)
1700 V
Input Capacitance (Ciss) (Max) @ Vds
120 pF @ 1000 V
Drive Voltage (Max Rds On, Min Rds On)
20V
Current - Continuous Drain (Id) @ 25°C
5.1A
| Attribute | Value |
|---|---|
| Mfr | NoMIS Power |
| Grade | - |
| Series | 1700 |
| FET Type | N-Channel |
| Packaging | Tube |
| Vgs (Max) | +25V, -5V |
| Technology | SiCFET (Silicon Carbide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Qualification | - |
| Package / Case | TO-247-3 |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Operating Temperature | -55°C ~ 175°C |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 1A, 20V |
| Power Dissipation (Max) | 56W (Tc) |
| Supplier Device Package | TO-247-3 |
| Gate Charge (Qg) (Max) @ Vgs | 29.5 nC @ 20 V |
| Drain to Source Voltage (Vdss) | 1700 V |
| Input Capacitance (Ciss) (Max) @ Vds | 120 pF @ 1000 V |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5.1A |
Purchase & Inquiry
Placing an Order
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Payment Options
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RFQ (Request for Quote)
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Important Notes
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2. Product availability and pricing may change over time. Our sales manager will verify the details of your order and contact you if any changes or confirmation are required.
Packaging Process
Step2: Vacuum Packaging
Step3: Anti-Static Bag
Step4: Package Boxes
Step5: Bar-Code Shipping Tags
Step6: Shipping
