NEC Corporation AN1L3N

NEC Corporation AN1L3N electronic component product image

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Manufacturer
Manufacturer No
AN1L3N
Package
TO-226-3, TO-92-3 (TO-226AA)
Packaging
Bulk
Description
TRANS PREBIAS PNP 50V 0.1A TO92
Detailed Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 mW Through Hole TO-92
Datasheet
Payment
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Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
Series
-
Packaging
Bulk
Power - Max
250 mW
Manufacturer
NEC Corporation
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Transistor Type
PNP - Pre-Biased
Resistors Included
R1 and R2
Resistor - Base (R1)
4.7 kOhms
Supplier Device Package
TO-92
Resistor - Emitter Base (R2)
10 kOhms
Vce Saturation (Max) @ Ib, Ic
200mV @ 250µA, 5mA
Current - Collector (Ic) (Max)
100 mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 50mA, 5V
Voltage - Collector Emitter Breakdown (Max)
50 V
AttributeValue
Series-
PackagingBulk
Power - Max250 mW
ManufacturerNEC Corporation
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Transistor TypePNP - Pre-Biased
Resistors IncludedR1 and R2
Resistor - Base (R1)4.7 kOhms
Supplier Device PackageTO-92
Resistor - Emitter Base (R2)10 kOhms
Vce Saturation (Max) @ Ib, Ic200mV @ 250µA, 5mA
Current - Collector (Ic) (Max)100 mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 50mA, 5V
Voltage - Collector Emitter Breakdown (Max)50 V

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Packaging Process

Product before packing
Step1: Product
Product in vacuum packaging
Step2: Vacuum Packaging
Product in anti-static bag
Step3: Anti-Static Bag
Individual packaging box
Step4: Package Boxes
Packaging box with shipping label
Step5: Bar-Code Shipping Tags
Shipping by cargo vessel
Step6: Shipping