Step1: Product
Navitas Semiconductor, Inc. G3R75MT12K
Images are for reference only
Manufacturer
Manufacturer No
G3R75MT12K
Quantity
10
Availability
In Stock
Package
TO-247-4
Packaging
Tube
Description
SIC MOSFET N-CH 41A TO247-4
Detailed Description
N-Channel 1200 V 41A (Tc) 207W (Tc) Through Hole TO-247-4
Datasheet
Payment
Delivery
Mfr
Navitas Semiconductor, Inc.
Grade
-
Series
G3R™
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
+22V, -10V
Technology
SiCFET (Silicon Carbide)
FET Feature
-
Mounting Type
Through Hole
Qualification
-
Package / Case
TO-247-4
Vgs(th) (Max) @ Id
2.69V @ 7.5mA
Base Product Number
G3R75
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
90mOhm @ 20A, 15V
Power Dissipation (Max)
207W (Tc)
Supplier Device Package
TO-247-4
Gate Charge (Qg) (Max) @ Vgs
54 nC @ 15 V
Drain to Source Voltage (Vdss)
1200 V
Input Capacitance (Ciss) (Max) @ Vds
1560 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On)
15V
Current - Continuous Drain (Id) @ 25°C
41A (Tc)
| Attribute | Value |
|---|---|
| Mfr | Navitas Semiconductor, Inc. |
| Grade | - |
| Series | G3R™ |
| FET Type | N-Channel |
| Packaging | Tube |
| Vgs (Max) | +22V, -10V |
| Technology | SiCFET (Silicon Carbide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Qualification | - |
| Package / Case | TO-247-4 |
| Vgs(th) (Max) @ Id | 2.69V @ 7.5mA |
| Base Product Number | G3R75 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 20A, 15V |
| Power Dissipation (Max) | 207W (Tc) |
| Supplier Device Package | TO-247-4 |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 15 V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1560 pF @ 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Current - Continuous Drain (Id) @ 25°C | 41A (Tc) |
Purchase & Inquiry
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Packaging Process
Step2: Vacuum Packaging
Step3: Anti-Static Bag
Step4: Package Boxes
Step5: Bar-Code Shipping Tags
Step6: Shipping
