10-13 NOV 2026 · Munich, Germany

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Murata Electronics AG117FLH7FRATCB

Murata Electronics AG117FLH7FRATCB electronic component product image

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Manufacturer
Manufacturer No
AG117FLH7FRATCB
Description
Trans MOSFET N-CH 60V 35A
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
HTS
8541.29.00.65
EU RoHS
Compliant
Category
Power MOSFET
ECCN (US)
EAR99
Availability
No Stock Available
Channel Mode
Enhancement
Channel Type
N
Configuration
Single Quad Drain Triple Source
Manufacturer Lead Time
16 weeks
Typical Fall Time (ns)
5
Typical Rise Time (ns)
7
Supplier Temperature Grade
Automotive
Number of Elements per Chip
1
Maximum Power Dissipation (mW)
33000
Typical Gate Charge @ 10V (nC)
6.6
Typical Gate Charge @ Vgs (nC)
4.5@6V|6.6@10V
Maximum Gate-Source Voltage (V)
±20
Typical Turn-On Delay Time (ns)
12
Maximum Drain-Source Voltage (V)
60
Typical Turn-Off Delay Time (ns)
17
Maximum Operating Temperature (°C)
175
Minimum Operating Temperature (°C)
-55
Maximum Continuous Drain Current (A)
35
Operating Junction Temperature (°C)
175
Typical Input Capacitance @ Vds (pF)
405@30V
Maximum Drain-Source Resistance (mOhm)
26.6@10V
AttributeValue
HTS8541.29.00.65
EU RoHSCompliant
CategoryPower MOSFET
ECCN (US)EAR99
AvailabilityNo Stock Available
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Manufacturer Lead Time16 weeks
Typical Fall Time (ns)5
Typical Rise Time (ns)7
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)33000
Typical Gate Charge @ 10V (nC)6.6
Typical Gate Charge @ Vgs (nC)4.5@6V|6.6@10V
Maximum Gate-Source Voltage (V)±20
Typical Turn-On Delay Time (ns)12
Maximum Drain-Source Voltage (V)60
Typical Turn-Off Delay Time (ns)17
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)35
Operating Junction Temperature (°C)175
Typical Input Capacitance @ Vds (pF)405@30V
Maximum Drain-Source Resistance (mOhm)26.6@10V

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Packaging Process