Microchip Technology JAN2N3700

Microchip Technology JAN2N3700 electronic component product image

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Manufacturer No
JAN2N3700
Availability
In Stock
Package
TO-206AA, TO-18-3 Metal Can
Packaging
Bulk
Description
TRANS NPN 80V 1A TO-18
Detailed Description
Bipolar (BJT) Transistor NPN 80 V 1 A 500 mW Through Hole TO-18
Datasheet
Payment
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Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
Mfr
Microchip Technology
Grade
Military
Series
-
Packaging
Bulk
Power - Max
500 mW
Mounting Type
Through Hole
Qualification
MIL-PRF-19500/391
Package / Case
TO-206AA, TO-18-3 Metal Can
Transistor Type
NPN
Base Product Number
2N3700
Operating Temperature
-65°C ~ 200°C (TJ)
Frequency - Transition
-
Supplier Device Package
TO-18
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Current - Collector (Ic) (Max)
1 A
Current - Collector Cutoff (Max)
10nA
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 500mA, 10V
Voltage - Collector Emitter Breakdown (Max)
80 V
AttributeValue
MfrMicrochip Technology
GradeMilitary
Series-
PackagingBulk
Power - Max500 mW
Mounting TypeThrough Hole
QualificationMIL-PRF-19500/391
Package / CaseTO-206AA, TO-18-3 Metal Can
Transistor TypeNPN
Base Product Number2N3700
Operating Temperature-65°C ~ 200°C (TJ)
Frequency - Transition-
Supplier Device PackageTO-18
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Current - Collector (Ic) (Max)1 A
Current - Collector Cutoff (Max)10nA
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 500mA, 10V
Voltage - Collector Emitter Breakdown (Max)80 V

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Packaging Process

Product before packing
Step1: Product
Product in vacuum packaging
Step2: Vacuum Packaging
Product in anti-static bag
Step3: Anti-Static Bag
Individual packaging box
Step4: Package Boxes
Packaging box with shipping label
Step5: Bar-Code Shipping Tags
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Step6: Shipping