10-13 NOV 2026 · Munich, Germany

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MagnaChip Semiconductor MPMD100B120RH

MagnaChip Semiconductor MPMD100B120RH electronic component product image

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Manufacturer No
MPMD100B120RH
Package
Case 7DM-3
Description
Trans IGBT Module N-CH 1200V 150A 780W 7-Pin Case 7DM-3
Detailed Description
Don't be afraid to step up the amps when using this MPMD100B120RH infineon IGBT module from MagnaChip Semiconductor. Its maximum power dissipation is 780000 mW. It has a maximum collector emitter voltage of 1200 V. It is made in a dual configuration. This IGBT driver board has an operating temperature range of -55 °C to 150 °C. This device utilizes npt technology.
Datasheet
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
HTS
EA
PPAP
Unknown
EU RoHS
Compliant
Mounting
Screw
ECCN (US)
EAR99
Pin Count
7
Automotive
Unknown
Technology
NPT
PCB changed
7
Availability
In Stock
Channel Type
N
Configuration
Dual
Package Width
62.5
Package Height
29.75(Max)
Package Length
108.5
Supplier Package
Case 7DM-3
Manufacturer Lead Time
99 weeks
Maximum Power Dissipation (mW)
780
Maximum Gate Emitter Voltage (V)
±20
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-55
Maximum Collector-Emitter Voltage (V)
1200
Maximum Gate Emitter Leakage Current (uA)
0.25
Maximum Continuous DC Collector Current (A)
150
Typical Collector-Emitter Saturation Voltage (V)
2.7
AttributeValue
HTSEA
PPAPUnknown
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
Pin Count7
AutomotiveUnknown
TechnologyNPT
PCB changed7
AvailabilityIn Stock
Channel TypeN
ConfigurationDual
Package Width62.5
Package Height29.75(Max)
Package Length108.5
Supplier PackageCase 7DM-3
Manufacturer Lead Time99 weeks
Maximum Power Dissipation (mW)780
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)1200
Maximum Gate Emitter Leakage Current (uA)0.25
Maximum Continuous DC Collector Current (A)150
Typical Collector-Emitter Saturation Voltage (V)2.7

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