10-13 NOV 2026 · Munich, Germany

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MagnaChip Semiconductor MDS9652EURH

MagnaChip Semiconductor MDS9652EURH electronic component product image

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Manufacturer No
MDS9652EURH
Package
SOIC
Packaging
Tape and Reel
Description
Trans MOSFET N/P-CH 30V 7.2A/6.1A 8-Pin SOIC T/R
Datasheet
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
HTS
8541.29.00.55
PPAP
Unknown
EU RoHS
Compliant
Category
Power MOSFET
Mounting
Surface Mount
ECCN (US)
EAR99
Packaging
Tape and Reel
Pin Count
8
Automotive
Unknown
Lead Shape
Gull-wing
PCB changed
8
Availability
No Stock Available
Channel Mode
Enhancement
Channel Type
N|P
Configuration
Dual Dual Drain
Package Width
3.9
Package Height
1.38
Package Length
4.9
Supplier Package
SOIC
Maximum IDSS (uA)
1
Standard Package Name
SO
Manufacturer Lead Time
8 weeks
Typical Fall Time (ns)
22@N Channel|11.6@P Channel
Typical Rise Time (ns)
23@N Channel|20.8@P Channel
Number of Elements per Chip
2
Maximum Power Dissipation (mW)
2000
Typical Gate Charge @ 10V (nC)
12.8@N Channel|25.1@P Channel
Typical Gate Charge @ Vgs (nC)
12.8@10V@N Channel|25.1@10V@P Channel
Maximum Gate-Source Voltage (V)
±20
Typical Turn-On Delay Time (ns)
11.6@P Channel|4.2@N Channel
Maximum Drain-Source Voltage (V)
30
Typical Turn-Off Delay Time (ns)
37@N Channel|27.6@P Channel
Maximum Gate Threshold Voltage (V)
3
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-55
Maximum Continuous Drain Current (A)
7.2@N Channel|6.1@P Channel
Typical Input Capacitance @ Vds (pF)
635@15V@N Channel|1128@15V@P Channel
Maximum Drain-Source Resistance (mOhm)
23@10V@N Channel|38@10V@P Channel
Maximum Gate-Source Leakage Current (nA)
10000
AttributeValue
HTS8541.29.00.55
PPAPUnknown
EU RoHSCompliant
CategoryPower MOSFET
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveUnknown
Lead ShapeGull-wing
PCB changed8
AvailabilityNo Stock Available
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual Dual Drain
Package Width3.9
Package Height1.38
Package Length4.9
Supplier PackageSOIC
Maximum IDSS (uA)1
Standard Package NameSO
Manufacturer Lead Time8 weeks
Typical Fall Time (ns)22@N Channel|11.6@P Channel
Typical Rise Time (ns)23@N Channel|20.8@P Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ 10V (nC)12.8@N Channel|25.1@P Channel
Typical Gate Charge @ Vgs (nC)12.8@10V@N Channel|25.1@10V@P Channel
Maximum Gate-Source Voltage (V)±20
Typical Turn-On Delay Time (ns)11.6@P Channel|4.2@N Channel
Maximum Drain-Source Voltage (V)30
Typical Turn-Off Delay Time (ns)37@N Channel|27.6@P Channel
Maximum Gate Threshold Voltage (V)3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)7.2@N Channel|6.1@P Channel
Typical Input Capacitance @ Vds (pF)635@15V@N Channel|1128@15V@P Channel
Maximum Drain-Source Resistance (mOhm)23@10V@N Channel|38@10V@P Channel
Maximum Gate-Source Leakage Current (nA)10000

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