10-13 NOV 2026 · Munich, Germany

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MagnaChip Semiconductor MDS1521URH

MagnaChip Semiconductor MDS1521URH electronic component product image

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Manufacturer No
MDS1521URH
Package
SOIC
Packaging
Tape and Reel
Description
Trans MOSFET N-CH 30V 18.8A 8-Pin SOIC T/R
Detailed Description
Amplify electronic signals and switch between them with the help of MagnaChip Semiconductor's MDS1521URH power MOSFET. Its maximum power dissipation is 2500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This device utilizes tmos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
Datasheet
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
HTS
8541.29.00.55
PPAP
Unknown
EU RoHS
Compliant
Category
Power MOSFET
Mounting
Surface Mount
ECCN (US)
EAR99
Packaging
Tape and Reel
Pin Count
8
Automotive
Unknown
Lead Shape
Gull-wing
PCB changed
8
Availability
No Stock Available
Channel Mode
Enhancement
Channel Type
N
Configuration
Single Quad Drain Triple Source
Package Width
3.9
Package Height
1.5(Max)
Package Length
4.9
Supplier Package
SOIC
Maximum IDSS (uA)
1
Standard Package Name
SO
Manufacturer Lead Time
8 weeks
Typical Fall Time (ns)
14
Typical Rise Time (ns)
24
Number of Elements per Chip
1
Maximum Power Dissipation (mW)
2500
Typical Gate Charge @ 10V (nC)
38.3
Typical Gate Charge @ Vgs (nC)
Maximum Gate-Source Voltage (V)
±20
Typical Turn-On Delay Time (ns)
9.3
Maximum Drain-Source Voltage (V)
30
Typical Turn-Off Delay Time (ns)
39.2
Maximum Gate Threshold Voltage (V)
2.7
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-55
Maximum Continuous Drain Current (A)
18.8
Typical Input Capacitance @ Vds (pF)
2514@15V
Maximum Drain-Source Resistance (mOhm)
4@10V
Maximum Gate-Source Leakage Current (nA)
100
AttributeValue
HTS8541.29.00.55
PPAPUnknown
EU RoHSCompliant
CategoryPower MOSFET
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveUnknown
Lead ShapeGull-wing
PCB changed8
AvailabilityNo Stock Available
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width3.9
Package Height1.5(Max)
Package Length4.9
Supplier PackageSOIC
Maximum IDSS (uA)1
Standard Package NameSO
Manufacturer Lead Time8 weeks
Typical Fall Time (ns)14
Typical Rise Time (ns)24
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ 10V (nC)38.3
Typical Gate Charge @ Vgs (nC)[email protected]|38.3@10V
Maximum Gate-Source Voltage (V)±20
Typical Turn-On Delay Time (ns)9.3
Maximum Drain-Source Voltage (V)30
Typical Turn-Off Delay Time (ns)39.2
Maximum Gate Threshold Voltage (V)2.7
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)18.8
Typical Input Capacitance @ Vds (pF)2514@15V
Maximum Drain-Source Resistance (mOhm)4@10V
Maximum Gate-Source Leakage Current (nA)100

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Packaging Process