Littelfuse Inc. IXFN170N65X2
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Manufacturer
Manufacturer No
IXFN170N65X2
Quantity
23
Availability
In Stock
Package
SOT-227B
Description
Trans MOSFET N-CH 650V 170A Automotive 4-Pin SOT-227B
Datasheet
Payment
Delivery
HTS
8541.29.00.55
PPAP
Unknown
SVHC
Yes
EU RoHS
Compliant with Exemption
Category
Power MOSFET
Mounting
Screw
ECCN (US)
EAR99
Pin Count
4
Automotive
Yes
Lead Shape
Screw
PCB changed
4
Availability
No Stock Available
Channel Mode
Enhancement
Channel Type
N
Configuration
Single Dual Source
Package Width
25.29
Package Height
9.26
Package Length
38.12
Supplier Package
SOT-227B
Maximum IDSS (uA)
50
Standard Package Name
SOT
SVHC Exceeds Threshold
Yes
Typical Fall Time (ns)
6
Typical Rise Time (ns)
15
Number of Elements per Chip
1
Maximum Power Dissipation (mW)
1170000
Typical Gate Charge @ 10V (nC)
434
Typical Gate Charge @ Vgs (nC)
434@10V
Maximum Gate-Source Voltage (V)
±30
Typical Output Capacitance (pF)
15800
Typical Turn-On Delay Time (ns)
60
Maximum Drain-Source Voltage (V)
650
Typical Gate Plateau Voltage (V)
6.5
Typical Turn-Off Delay Time (ns)
133
Maximum Diode Forward Voltage (V)
1.4
Typical Gate to Drain Charge (nC)
137
Maximum Gate Threshold Voltage (V)
5
Minimum Gate Threshold Voltage (V)
3.5
Typical Gate to Source Charge (nC)
166
Typical Reverse Recovery Time (ns)
270
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-55
Maximum Continuous Drain Current (A)
170
Operating Junction Temperature (°C)
-55 to 150
Typical Input Capacitance @ Vds (pF)
27000@25V
Typical Reverse Recovery Charge (nC)
3100
Maximum Drain-Source Resistance (mOhm)
13@10V
Maximum Gate-Source Leakage Current (nA)
200
Maximum Positive Gate-Source Voltage (V)
30
Maximum Pulsed Drain Current @ TC=25°C (A)
340
Typical Reverse Transfer Capacitance @ Vds (pF)
12400@25V
| Attribute | Value |
|---|---|
| HTS | 8541.29.00.55 |
| PPAP | Unknown |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Category | Power MOSFET |
| Mounting | Screw |
| ECCN (US) | EAR99 |
| Pin Count | 4 |
| Automotive | Yes |
| Lead Shape | Screw |
| PCB changed | 4 |
| Availability | No Stock Available |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Dual Source |
| Package Width | 25.29 |
| Package Height | 9.26 |
| Package Length | 38.12 |
| Supplier Package | SOT-227B |
| Maximum IDSS (uA) | 50 |
| Standard Package Name | SOT |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 6 |
| Typical Rise Time (ns) | 15 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 1170000 |
| Typical Gate Charge @ 10V (nC) | 434 |
| Typical Gate Charge @ Vgs (nC) | 434@10V |
| Maximum Gate-Source Voltage (V) | ±30 |
| Typical Output Capacitance (pF) | 15800 |
| Typical Turn-On Delay Time (ns) | 60 |
| Maximum Drain-Source Voltage (V) | 650 |
| Typical Gate Plateau Voltage (V) | 6.5 |
| Typical Turn-Off Delay Time (ns) | 133 |
| Maximum Diode Forward Voltage (V) | 1.4 |
| Typical Gate to Drain Charge (nC) | 137 |
| Maximum Gate Threshold Voltage (V) | 5 |
| Minimum Gate Threshold Voltage (V) | 3.5 |
| Typical Gate to Source Charge (nC) | 166 |
| Typical Reverse Recovery Time (ns) | 270 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 170 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 27000@25V |
| Typical Reverse Recovery Charge (nC) | 3100 |
| Maximum Drain-Source Resistance (mOhm) | 13@10V |
| Maximum Gate-Source Leakage Current (nA) | 200 |
| Maximum Positive Gate-Source Voltage (V) | 30 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 340 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 12400@25V |
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