10-13 NOV 2026 · Munich, Germany

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IXYS IXFH320N10T2

IXYS IXFH320N10T2 electronic component product image

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Manufacturer
Manufacturer No
IXFH320N10T2
Quantity
5
Availability
In Stock
Package
TO-247
Description
Trans MOSFET N-CH 100V 320A 3-Pin(3+Tab) TO-247
Detailed Description
Compared to traditional transistors, IXFH320N10T2 power MOSFETs, developed by Ixys Corporation, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 1000000 mW. This device is made with hiperfet technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
Datasheet
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Delivery
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AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
HTS
COMPONENTS
Tab
Tab
PPAP
No
SVHC
Yes
EU RoHS
Compliant with Exemption
Category
Power MOSFET
Mounting
Through Hole
ECCN (US)
EAR99
Pin Count
3
Automotive
No
PCB changed
3
Availability
No Stock Available
Channel Mode
Enhancement
Channel Type
N
Configuration
Single
Package Width
5.3(Max)
Package Height
21.46(Max)
Package Length
16.26(Max)
Supplier Package
TO-247
Standard Package Name
TO
SVHC Exceeds Threshold
Yes
Typical Fall Time (ns)
177
Typical Rise Time (ns)
46
Number of Elements per Chip
1
Maximum Power Dissipation (mW)
1000000
Typical Gate Charge @ 10V (nC)
430
Typical Gate Charge @ Vgs (nC)
430@10V
Maximum Gate-Source Voltage (V)
±20
Typical Turn-On Delay Time (ns)
36
Maximum Drain-Source Voltage (V)
100
Typical Turn-Off Delay Time (ns)
73
Maximum Operating Temperature (°C)
175
Minimum Operating Temperature (°C)
-55
Maximum Continuous Drain Current (A)
320
Typical Input Capacitance @ Vds (pF)
26000@25V
Maximum Drain-Source Resistance (mOhm)
3.5@10V
AttributeValue
HTSCOMPONENTS
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
CategoryPower MOSFET
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed3
AvailabilityNo Stock Available
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5.3(Max)
Package Height21.46(Max)
Package Length16.26(Max)
Supplier PackageTO-247
Standard Package NameTO
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)177
Typical Rise Time (ns)46
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000000
Typical Gate Charge @ 10V (nC)430
Typical Gate Charge @ Vgs (nC)430@10V
Maximum Gate-Source Voltage (V)±20
Typical Turn-On Delay Time (ns)36
Maximum Drain-Source Voltage (V)100
Typical Turn-Off Delay Time (ns)73
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)320
Typical Input Capacitance @ Vds (pF)26000@25V
Maximum Drain-Source Resistance (mOhm)3.5@10V

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