Step1: Product
Inventchip IV2Q06060D7Z
Images are for reference only
Manufacturer
Manufacturer No
IV2Q06060D7Z
Package
TO-263-8, D2PAK (7 Leads + Tab)
Packaging
Strip
Description
GEN 2, SIC MOSFET, 650V 60MOHM,
Detailed Description
N-Channel 650 V 50A (Tc) 174W (Tc) Through Hole TO-263-7
Datasheet
Payment
Delivery
Mfr
Inventchip
Series
-
FET Type
N-Channel
Packaging
Strip
Vgs (Max)
+20V, -5V
Technology
SiCFET (Silicon Carbide)
FET Feature
-
Mounting Type
Through Hole
Package / Case
TO-263-8, D2PAK (7 Leads + Tab)
Vgs(th) (Max) @ Id
4.5V @ 7.5mA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
78mOhm @ 15A, 18V
Power Dissipation (Max)
174W (Tc)
Supplier Device Package
TO-263-7
Gate Charge (Qg) (Max) @ Vgs
94.7 nC @ 18 V
Drain to Source Voltage (Vdss)
650 V
Input Capacitance (Ciss) (Max) @ Vds
2000 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On)
18V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
| Attribute | Value |
|---|---|
| Mfr | Inventchip |
| Series | - |
| FET Type | N-Channel |
| Packaging | Strip |
| Vgs (Max) | +20V, -5V |
| Technology | SiCFET (Silicon Carbide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab) |
| Vgs(th) (Max) @ Id | 4.5V @ 7.5mA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 78mOhm @ 15A, 18V |
| Power Dissipation (Max) | 174W (Tc) |
| Supplier Device Package | TO-263-7 |
| Gate Charge (Qg) (Max) @ Vgs | 94.7 nC @ 18 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
Purchase & Inquiry
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Important Notes
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2. Product availability and pricing may change over time. Our sales manager will verify the details of your order and contact you if any changes or confirmation are required.
Packaging Process
Step2: Vacuum Packaging
Step3: Anti-Static Bag
Step4: Package Boxes
Step5: Bar-Code Shipping Tags
Step6: Shipping
