10-13 NOV 2026 · Munich, Germany

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Infineon Technologies IRL7486MTRPBF

Infineon Technologies IRL7486MTRPBF electronic component product image

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Manufacturer No
IRL7486MTRPBF
Quantity
697
Availability
In Stock
Package
Direct-FET ME
Packaging
Tape and Reel
Description
Trans MOSFET N-CH Si 40V 209A 10-Pin Direct-FET ME T/R
Datasheet
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
HTS
8541.29.00.55
PPAP
No
EU RoHS
Compliant
Category
Power MOSFET
Material
Si
Mounting
Surface Mount
ECCN (US)
EAR99
Packaging
Tape and Reel
Pin Count
10
Automotive
No
PCB changed
10
Availability
In Stock
Channel Mode
Enhancement
Channel Type
N
Configuration
Single Quad Drain Quint Source
Package Width
5.05(Max)
Package Height
0.53(Max)
Package Length
5.45(Max)
Supplier Package
Direct-FET ME
Maximum IDSS (uA)
1
Typical Fall Time (ns)
47
Typical Rise Time (ns)
110
Number of Elements per Chip
1
Maximum Power Dissipation (mW)
104000
Typical Gate Charge @ Vgs (nC)
Maximum Gate-Source Voltage (V)
±20
Typical Turn-On Delay Time (ns)
35
Maximum Drain-Source Voltage (V)
40
Typical Turn-Off Delay Time (ns)
54
Maximum Gate Threshold Voltage (V)
2.5
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-55
Maximum Continuous Drain Current (A)
209
Typical Input Capacitance @ Vds (pF)
6904@25V
Maximum Drain-Source Resistance (mOhm)
1.25@10V
Maximum Gate-Source Leakage Current (nA)
100
Typical Drain-Source Resistance @ 25°C (mOhm)
AttributeValue
HTS8541.29.00.55
PPAPNo
EU RoHSCompliant
CategoryPower MOSFET
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count10
AutomotiveNo
PCB changed10
AvailabilityIn Stock
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Quint Source
Package Width5.05(Max)
Package Height0.53(Max)
Package Length5.45(Max)
Supplier PackageDirect-FET ME
Maximum IDSS (uA)1
Typical Fall Time (ns)47
Typical Rise Time (ns)110
Number of Elements per Chip1
Maximum Power Dissipation (mW)104000
Typical Gate Charge @ Vgs (nC)[email protected]
Maximum Gate-Source Voltage (V)±20
Typical Turn-On Delay Time (ns)35
Maximum Drain-Source Voltage (V)40
Typical Turn-Off Delay Time (ns)54
Maximum Gate Threshold Voltage (V)2.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)209
Typical Input Capacitance @ Vds (pF)6904@25V
Maximum Drain-Source Resistance (mOhm)1.25@10V
Maximum Gate-Source Leakage Current (nA)100
Typical Drain-Source Resistance @ 25°C (mOhm)1@10V|[email protected]

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