Step1: Product
Infineon Technologies IRF9952
Images are for reference only
Manufacturer
Manufacturer No
IRF9952
Package
8-SOIC (0.154", 3.90mm Width)
Packaging
Tube
Description
MOSFET N/P-CH 30V 3.5A/2.3A 8SO
Detailed Description
Mosfet Array 30V 3.5A, 2.3A 2W Surface Mount 8-SO
Datasheet
Payment
Delivery
Series
HEXFET®
Packaging
Tube
Technology
MOSFET (Metal Oxide)
FET Feature
Logic Level Gate
Power - Max
2W
Manufacturer
Infineon Technologies
Configuration
N and P-Channel
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Vgs(th) (Max) @ Id
1V @ 250µA
Base Product Number
IRF995
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
100mOhm @ 2.2A, 10V
Supplier Device Package
8-SO
Gate Charge (Qg) (Max) @ Vgs
14nC @ 10V
Drain to Source Voltage (Vdss)
30V
Input Capacitance (Ciss) (Max) @ Vds
190pF @ 15V
Current - Continuous Drain (Id) @ 25°C
3.5A, 2.3A
| Attribute | Value |
|---|---|
| Series | HEXFET® |
| Packaging | Tube |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Logic Level Gate |
| Power - Max | 2W |
| Manufacturer | Infineon Technologies |
| Configuration | N and P-Channel |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Base Product Number | IRF995 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2.2A, 10V |
| Supplier Device Package | 8-SO |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A, 2.3A |
Purchase & Inquiry
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Important Notes
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2. Product availability and pricing may change over time. Our sales manager will verify the details of your order and contact you if any changes or confirmation are required.
Packaging Process
Step2: Vacuum Packaging
Step3: Anti-Static Bag
Step4: Package Boxes
Step5: Bar-Code Shipping Tags
Step6: Shipping
