Infineon Technologies IRF8113
Image is only for reference
| Attribute | Value |
|---|---|
| Mfr | Infineon Technologies |
| Grade | - |
| Series | HEXFET® |
| FET Type | N-Channel |
| Packaging | Tube |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Qualification | - |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 5.6mOhm @ 17.2A, 10V |
| Power Dissipation (Max) | 2.5W (Ta) |
| Supplier Device Package | 8-SO |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2910 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 17.2A (Ta) |
Purchase & Inquiry
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Packaging Process
