10-13 NOV 2026 · Munich, Germany

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Infineon Technologies IRF7342PBF

Infineon Technologies IRF7342PBF electronic component product image

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Manufacturer No
IRF7342PBF
Date Code
21+
Quantity
40,000
Availability
In Stock
Package
SOIC
Packaging
Tube
Description
Trans MOSFET P-CH Si 55V 3.4A 8-Pin SOIC Tube
Datasheet
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
HTS
COMPONENTS
PPAP
No
EU RoHS
Compliant
Category
Power MOSFET
Material
Si
Mounting
Surface Mount
ECCN (US)
EAR99
Packaging
Tube
Pin Count
8
Automotive
No
Lead Shape
Gull-wing
PCB changed
8
Availability
No Stock Available
Channel Mode
Enhancement
Channel Type
P
Configuration
Dual Dual Drain
Package Width
4(Max)
Package Height
1.5(Max)
Package Length
5(Max)
Supplier Package
SOIC
Standard Package Name
SO
Typical Fall Time (ns)
22
Typical Rise Time (ns)
10
Number of Elements per Chip
2
Maximum Power Dissipation (mW)
2000
Typical Gate Charge @ 10V (nC)
26
Typical Gate Charge @ Vgs (nC)
26@10V
Maximum Gate-Source Voltage (V)
±20
Typical Output Capacitance (pF)
210
Typical Turn-On Delay Time (ns)
14
Maximum Drain-Source Voltage (V)
55
Typical Turn-Off Delay Time (ns)
43
Typical Gate to Drain Charge (nC)
8.4
Maximum Gate Threshold Voltage (V)
1(Min)
Typical Gate to Source Charge (nC)
3
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-55
Maximum Continuous Drain Current (A)
3.4
Typical Input Capacitance @ Vds (pF)
690@25V
Typical Reverse Recovery Charge (nC)
85
Maximum Drain-Source Resistance (mOhm)
105@10V
Typical Drain-Source Resistance @ 25°C (mOhm)
AttributeValue
HTSCOMPONENTS
PPAPNo
EU RoHSCompliant
CategoryPower MOSFET
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTube
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
AvailabilityNo Stock Available
Channel ModeEnhancement
Channel TypeP
ConfigurationDual Dual Drain
Package Width4(Max)
Package Height1.5(Max)
Package Length5(Max)
Supplier PackageSOIC
Standard Package NameSO
Typical Fall Time (ns)22
Typical Rise Time (ns)10
Number of Elements per Chip2
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ 10V (nC)26
Typical Gate Charge @ Vgs (nC)26@10V
Maximum Gate-Source Voltage (V)±20
Typical Output Capacitance (pF)210
Typical Turn-On Delay Time (ns)14
Maximum Drain-Source Voltage (V)55
Typical Turn-Off Delay Time (ns)43
Typical Gate to Drain Charge (nC)8.4
Maximum Gate Threshold Voltage (V)1(Min)
Typical Gate to Source Charge (nC)3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3.4
Typical Input Capacitance @ Vds (pF)690@25V
Typical Reverse Recovery Charge (nC)85
Maximum Drain-Source Resistance (mOhm)105@10V
Typical Drain-Source Resistance @ 25°C (mOhm)95@10V|[email protected]

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