10-13 NOV 2026 · Munich, Germany

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Infineon Technologies DATA-2N7336JANTX

Infineon Technologies DATA-2N7336JANTX electronic component product image

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Manufacturer No
DATA-2N7336JANTX
Package
MO-036AB
Description
Trans MOSFET N/P-CH 100V 1A/0.75A 14-Pin MO-036AB
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
HTS
8541.29.00.55
PPAP
No
EU RoHS
Not Compliant
Category
Power MOSFET
Mounting
Through Hole
ECCN (US)
EAR99
Pin Count
14
Automotive
No
PCB changed
14
Availability
No Stock Available
Channel Mode
Enhancement
Channel Type
N|P
Configuration
Quad
Package Width
7.74(Max)
Package Height
3.3(Max)
Package Length
19.3(Max)
Supplier Package
MO-036AB
Typical Fall Time (ns)
40(Max)
Typical Rise Time (ns)
25(Max)@N Channel|60(Max)@P Channel
Supplier Temperature Grade
Military
Number of Elements per Chip
4
Maximum Power Dissipation (mW)
1400
Typical Gate Charge @ 10V (nC)
15(Max)
Typical Gate Charge @ Vgs (nC)
15(Max)@10V
Maximum Gate-Source Voltage (V)
±20
Typical Turn-On Delay Time (ns)
20(Max)@N Channel|30(Max)@P Channel
Maximum Drain-Source Voltage (V)
100
Typical Turn-Off Delay Time (ns)
40(Max)
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-55
Maximum Continuous Drain Current (A)
1@N Channel|0.75@P Channel
Typical Input Capacitance @ Vds (pF)
180@25V@N Channel|200@25V@P Channel
Maximum Drain-Source Resistance (mOhm)
800@10V@N Channel|1730@10V@P Channel
AttributeValue
HTS8541.29.00.55
PPAPNo
EU RoHSNot Compliant
CategoryPower MOSFET
MountingThrough Hole
ECCN (US)EAR99
Pin Count14
AutomotiveNo
PCB changed14
AvailabilityNo Stock Available
Channel ModeEnhancement
Channel TypeN|P
ConfigurationQuad
Package Width7.74(Max)
Package Height3.3(Max)
Package Length19.3(Max)
Supplier PackageMO-036AB
Typical Fall Time (ns)40(Max)
Typical Rise Time (ns)25(Max)@N Channel|60(Max)@P Channel
Supplier Temperature GradeMilitary
Number of Elements per Chip4
Maximum Power Dissipation (mW)1400
Typical Gate Charge @ 10V (nC)15(Max)
Typical Gate Charge @ Vgs (nC)15(Max)@10V
Maximum Gate-Source Voltage (V)±20
Typical Turn-On Delay Time (ns)20(Max)@N Channel|30(Max)@P Channel
Maximum Drain-Source Voltage (V)100
Typical Turn-Off Delay Time (ns)40(Max)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)1@N Channel|0.75@P Channel
Typical Input Capacitance @ Vds (pF)180@25V@N Channel|200@25V@P Channel
Maximum Drain-Source Resistance (mOhm)800@10V@N Channel|1730@10V@P Channel

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