GeneSiC Semiconductor G3R45MT17D
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| Attribute | Value |
|---|---|
| HTS | 8541.10.00.80 |
| Tab | Tab |
| PPAP | Unknown |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Category | Power MOSFET |
| Material | SiC |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Pin Count | 3 |
| Automotive | Yes |
| PCB changed | 3 |
| Availability | No Stock Available |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 5.21(Max) |
| Package Height | 21.1(Max) |
| Package Length | 16.13(Max) |
| Supplier Package | TO-247 |
| Typical Fall Time (ns) | 12 |
| Typical Rise Time (ns) | 19 |
| Supplier Temperature Grade | Industrial |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 364000 |
| Typical Gate Charge @ Vgs (nC) | 106@15V |
| Maximum Gate-Source Voltage (V) | 15 |
| Typical Turn-On Delay Time (ns) | 33 |
| Maximum Drain-Source Voltage (V) | 1700 |
| Typical Turn-Off Delay Time (ns) | 17 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 52 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Typical Input Capacitance @ Vds (pF) | 3199@1000V |
| Maximum Drain-Source Resistance (mOhm) | 62@15V |
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Packaging Process
