GeneSiC Semiconductor G3R160MT17J-TR
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Manufacturer
Manufacturer No
G3R160MT17J-TR
Package
TO-263
Description
Trans MOSFET N-CH SiC 1.7KV 18A 8-Pin(7+Tab) TO-263
Datasheet
Payment
Delivery
Tab
Tab
PPAP
No
EU RoHS
Compliant
Category
Power MOSFET
Material
SiC
Mounting
Surface Mount
ECCN (US)
EAR99
Pin Count
8
Automotive
No
Lead Shape
Gull-wing
PCB changed
7
Availability
No Stock Available
Channel Mode
Enhancement
Channel Type
N
Configuration
Single Hex Source
Package Width
9.08
Package Height
4.43
Package Length
10.18
Supplier Package
TO-263
Standard Package Name
TO
Typical Fall Time (ns)
9
Typical Rise Time (ns)
11
Number of Elements per Chip
1
Maximum Power Dissipation (mW)
145000
Typical Gate Charge @ Vgs (nC)
29@15V
Maximum Gate-Source Voltage (V)
15
Typical Output Capacitance (pF)
23
Typical Turn-On Delay Time (ns)
14
Maximum Drain-Source Voltage (V)
1700
Typical Gate Plateau Voltage (V)
5
Typical Turn-Off Delay Time (ns)
16
Typical Diode Forward Voltage (V)
4.6
Typical Gate to Drain Charge (nC)
9
Minimum Gate Threshold Voltage (V)
1.8
Typical Gate Threshold Voltage (V)
2.7
Typical Gate to Source Charge (nC)
9
Typical Reverse Recovery Time (ns)
26
Maximum Operating Temperature (°C)
175
Minimum Operating Temperature (°C)
-55
Maximum Continuous Drain Current (A)
18
Operating Junction Temperature (°C)
-55 to 175
Typical Input Capacitance @ Vds (pF)
854@1000V
Typical Reverse Recovery Charge (nC)
81
Maximum Drain-Source Resistance (mOhm)
224@15V
Maximum Gate-Source Leakage Current (nA)
100
Maximum Positive Gate-Source Voltage (V)
15
Maximum Pulsed Drain Current @ TC=25°C (A)
32
Typical Drain-Source Resistance @ 25°C (mOhm)
160@15V
Typical Reverse Transfer Capacitance @ Vds (pF)
4.1@1000V
| Attribute | Value |
|---|---|
| Tab | Tab |
| PPAP | No |
| EU RoHS | Compliant |
| Category | Power MOSFET |
| Material | SiC |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 7 |
| Availability | No Stock Available |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Hex Source |
| Package Width | 9.08 |
| Package Height | 4.43 |
| Package Length | 10.18 |
| Supplier Package | TO-263 |
| Standard Package Name | TO |
| Typical Fall Time (ns) | 9 |
| Typical Rise Time (ns) | 11 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 145000 |
| Typical Gate Charge @ Vgs (nC) | 29@15V |
| Maximum Gate-Source Voltage (V) | 15 |
| Typical Output Capacitance (pF) | 23 |
| Typical Turn-On Delay Time (ns) | 14 |
| Maximum Drain-Source Voltage (V) | 1700 |
| Typical Gate Plateau Voltage (V) | 5 |
| Typical Turn-Off Delay Time (ns) | 16 |
| Typical Diode Forward Voltage (V) | 4.6 |
| Typical Gate to Drain Charge (nC) | 9 |
| Minimum Gate Threshold Voltage (V) | 1.8 |
| Typical Gate Threshold Voltage (V) | 2.7 |
| Typical Gate to Source Charge (nC) | 9 |
| Typical Reverse Recovery Time (ns) | 26 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 18 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Typical Input Capacitance @ Vds (pF) | 854@1000V |
| Typical Reverse Recovery Charge (nC) | 81 |
| Maximum Drain-Source Resistance (mOhm) | 224@15V |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum Positive Gate-Source Voltage (V) | 15 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 32 |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 160@15V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 4.1@1000V |
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