GeneSiC Semiconductor G2R1000MT33J
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| Attribute | Value |
|---|---|
| HTS | 8541.10.00.80 |
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Category | Power MOSFET |
| Material | SiC |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Pin Count | 8 |
| Automotive | No |
| PCB changed | 7 |
| Availability | No Stock Available |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quint Source |
| Package Width | 9.08 |
| Package Height | 4.43 |
| Package Length | 10.18 |
| Supplier Package | TO-263 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 74000 |
| Typical Gate Charge @ Vgs (nC) | 21@20V |
| Maximum Gate-Source Voltage (V) | 20 |
| Maximum Drain-Source Voltage (V) | 3300 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 4 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Typical Input Capacitance @ Vds (pF) | 238@1000V |
| Maximum Drain-Source Resistance (mOhm) | 1200@20V |
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Packaging Process
