GE Aerospace GE17140CEA3

GE Aerospace GE17140CEA3 electronic component product image

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Manufacturer
Manufacturer No
GE17140CEA3
Package
Module
Packaging
Bulk
Description
SIC 2N-CH 1700V 1275A MODULE
Detailed Description
Mosfet Array 1700V (1.7kV) 1.275kA 3750W Chassis Mount Module
Datasheet
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
Series
SiC Power
Packaging
Bulk
Technology
Silicon Carbide (SiC)
FET Feature
-
Power - Max
3750W
Manufacturer
GE Aerospace
Configuration
2 N-Channel (Half Bridge)
Mounting Type
Chassis Mount
Qualification
AEC-Q101
Package / Case
Module
Vgs(th) (Max) @ Id
4.5V @ 480mA
Base Product Number
GE17140
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
-
Supplier Device Package
Module
Gate Charge (Qg) (Max) @ Vgs
3621nC @ 18V
Drain to Source Voltage (Vdss)
1700V (1.7kV)
Input Capacitance (Ciss) (Max) @ Vds
82000pF @ 600V
Current - Continuous Drain (Id) @ 25°C
1.275kA
AttributeValue
SeriesSiC Power
PackagingBulk
TechnologySilicon Carbide (SiC)
FET Feature-
Power - Max3750W
ManufacturerGE Aerospace
Configuration2 N-Channel (Half Bridge)
Mounting TypeChassis Mount
QualificationAEC-Q101
Package / CaseModule
Vgs(th) (Max) @ Id4.5V @ 480mA
Base Product NumberGE17140
Operating Temperature-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs-
Supplier Device PackageModule
Gate Charge (Qg) (Max) @ Vgs3621nC @ 18V
Drain to Source Voltage (Vdss)1700V (1.7kV)
Input Capacitance (Ciss) (Max) @ Vds82000pF @ 600V
Current - Continuous Drain (Id) @ 25°C1.275kA

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Packaging Process

Product before packing
Step1: Product
Product in vacuum packaging
Step2: Vacuum Packaging
Product in anti-static bag
Step3: Anti-Static Bag
Individual packaging box
Step4: Package Boxes
Packaging box with shipping label
Step5: Bar-Code Shipping Tags
Shipping by cargo vessel
Step6: Shipping