10-13 NOV 2026 · Munich, Germany

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fastSiC FF12040QA

fastSiC FF12040QA electronic component product image

Image is only for reference

Manufacturer
Manufacturer No
FF12040QA
Package
TO-247-4
Packaging
Tube
Description
SICFET N-CH 1200V 54A TO-247-4L
Detailed Description
N-Channel 1200 V 54A (Tc) 278W (Tc) Through Hole TO-247-4L
Datasheet
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
Mfr
fastSiC
Grade
-
Series
Falcon
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
+18V, -8V
Technology
SiCFET (Silicon Carbide)
FET Feature
-
Mounting Type
Through Hole
Qualification
-
Package / Case
TO-247-4
Vgs(th) (Max) @ Id
2.2V @ 40mA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
56mOhm @ 20A, 18V
Power Dissipation (Max)
278W (Tc)
Supplier Device Package
TO-247-4L
Gate Charge (Qg) (Max) @ Vgs
117 nC @ 15 V
Drain to Source Voltage (Vdss)
1200 V
Input Capacitance (Ciss) (Max) @ Vds
3129 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On)
18V
Current - Continuous Drain (Id) @ 25°C
54A (Tc)
AttributeValue
MfrfastSiC
Grade-
SeriesFalcon
FET TypeN-Channel
PackagingTube
Vgs (Max)+18V, -8V
TechnologySiCFET (Silicon Carbide)
FET Feature-
Mounting TypeThrough Hole
Qualification-
Package / CaseTO-247-4
Vgs(th) (Max) @ Id2.2V @ 40mA
Operating Temperature-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs56mOhm @ 20A, 18V
Power Dissipation (Max)278W (Tc)
Supplier Device PackageTO-247-4L
Gate Charge (Qg) (Max) @ Vgs117 nC @ 15 V
Drain to Source Voltage (Vdss)1200 V
Input Capacitance (Ciss) (Max) @ Vds3129 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On)18V
Current - Continuous Drain (Id) @ 25°C54A (Tc)

Purchase & Inquiry

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Packaging Process