Fairchild Semiconductor FQPF7P06
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| Attribute | Value |
|---|---|
| Mfr | Fairchild Semiconductor |
| Grade | - |
| Series | QFET® |
| FET Type | P-Channel |
| Packaging | Tube |
| Vgs (Max) | ±25V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Qualification | - |
| Package / Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 410mOhm @ 2.65A, 10V |
| Power Dissipation (Max) | 24W (Tc) |
| Supplier Device Package | TO-220F-3 |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 295 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 5.3A (Tc) |
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Packaging Process
