10-13 NOV 2026 · Munich, Germany

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EVVO 4N60F

EVVO 4N60F electronic component product image

Image is only for reference

Manufacturer
Manufacturer No
4N60F
Package
TO-220-3 Full Pack
Packaging
Tube
Description
MOSFET N-CH 600V 4A TO220F
Detailed Description
N-Channel 600 V 3A (Tc) 30W (Tc) Through Hole TO-220F
Datasheet
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
Mfr
EVVO
Grade
-
Series
-
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Mounting Type
Through Hole
Qualification
-
Package / Case
TO-220-3 Full Pack
Vgs(th) (Max) @ Id
4V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
2.8Ohm @ 1.5A, 10V
Power Dissipation (Max)
30W (Tc)
Supplier Device Package
TO-220F
Gate Charge (Qg) (Max) @ Vgs
13.5 nC @ 10 V
Drain to Source Voltage (Vdss)
600 V
Input Capacitance (Ciss) (Max) @ Vds
462 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
3A (Tc)
AttributeValue
MfrEVVO
Grade-
Series-
FET TypeN-Channel
PackagingTube
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
FET Feature-
Mounting TypeThrough Hole
Qualification-
Package / CaseTO-220-3 Full Pack
Vgs(th) (Max) @ Id4V @ 250µA
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs2.8Ohm @ 1.5A, 10V
Power Dissipation (Max)30W (Tc)
Supplier Device PackageTO-220F
Gate Charge (Qg) (Max) @ Vgs13.5 nC @ 10 V
Drain to Source Voltage (Vdss)600 V
Input Capacitance (Ciss) (Max) @ Vds462 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C3A (Tc)

Purchase & Inquiry

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RFQ (Request for Quote)

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Important Notes

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2. Product availability and pricing may change over time. Our sales manager will verify the details of your order and contact you if any changes or confirmation are required.

Packaging Process