Diodes Incorporated DMT10H072LDV-7
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| Attribute | Value |
|---|---|
| Series | - |
| Packaging | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Power - Max | 1W (Ta) |
| Manufacturer | Diodes Incorporated |
| Configuration | 2 N-Channel (Dual) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 66mOhm @ 4.5A, 10V |
| Supplier Device Package | PowerDI3333-8 (Type UXC) |
| Gate Charge (Qg) (Max) @ Vgs | 4.5nC @ 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance (Ciss) (Max) @ Vds | 228pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
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Packaging Process
