10-13 NOV 2026 · Munich, Germany

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Diodes Incorporated DMP3017SFGQ-7

Diodes Incorporated DMP3017SFGQ-7 electronic component product image

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Manufacturer No
DMP3017SFGQ-7
Date Code
2347
Quantity
103,706
Availability
In Stock
Description
P-Channel 30 V 10 mOhm 41 nC SMT Enhancement Mode Mosfet - POWERDI-3333-8
Datasheet
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
Mount
Surface Mount
Height
850 µm
Rds On Max
10 mΩ
Number of Pins
8
Input Capacitance
2.246 nF
Power Dissipation
2.5 W
Number of Channels
1
Number of Elements
1
Turn-On Delay Time
7.5 ns
Number of Terminals
5
Turn-Off Delay Time
45.6 ns
Max Power Dissipation
940 mW
Min Breakdown Voltage
30 V
Max Operating Temperature
150 °C
Min Operating Temperature
-55 °C
Drain to Source Resistance
10 mΩ
Gate to Source Voltage (Vgs)
25 V
Continuous Drain Current (ID)
11.5 A
Drain to Source Voltage (Vds)
-30 V
Max Junction Temperature (Tj)
150 °C
Manufacturer Package Identifier
POWERDI3333-8
Drain to Source Breakdown Voltage
-30 V
AttributeValue
MountSurface Mount
Height850 µm
Rds On Max10 mΩ
Number of Pins8
Input Capacitance2.246 nF
Power Dissipation2.5 W
Number of Channels1
Number of Elements1
Turn-On Delay Time7.5 ns
Number of Terminals5
Turn-Off Delay Time45.6 ns
Max Power Dissipation940 mW
Min Breakdown Voltage30 V
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance10 mΩ
Gate to Source Voltage (Vgs)25 V
Continuous Drain Current (ID)11.5 A
Drain to Source Voltage (Vds)-30 V
Max Junction Temperature (Tj)150 °C
Manufacturer Package IdentifierPOWERDI3333-8
Drain to Source Breakdown Voltage-30 V

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